Nonvolatile solid-electrolyte switch embedded into Cu interconnect

Author

Sakamoto, T. ; Tada, M. ; Banno, N. ; Tsuji, Y. ; Saitoh, Y. ; Yabe, Y. ; Hada, H. ; Iguchi, N. ; Aono, M.

Author_Institution

Device Platforms Res. Labs., NEC Corp., Sagamihara, Japan

fYear

2009

fDate

16-18 June 2009

Firstpage

130

Lastpage

131

Abstract

A solid-electrolyte switch (ldquoNanoBridgerdquo) has been successfully embedded into a 0.13-mum-node dual-damascene Cu interconnect using a highly reliable bilayer solid-electrolyte (TaSiO/Ta₂O₅) and a thin oxidation barrier, resulting in an excellent ON/OFF ratio (> 10⁹) at a low ON resistance of 50Omega. The newly developed bilayer solid-electrolyte has improved the thermal stability during the BEOL process as well as improved electrical breakdown. The CMOS compatible NanoBridge is a promising switch to achieve high-performance and low-cost programmable LSIs.

Keywords

CMOS integrated circuits; electrolytes; integrated circuit interconnections; large scale integration; CMOS compatible NanoBridge; Cu; electrical breakdown; integrated circuit interconnections; nonvolatile solid-electrolyte switch; resistance 50 ohm; size 0.13 mum; thermal stability; Bridge circuits; Dielectrics; Electric breakdown; Electrodes; Integrated circuit interconnections; National electric code; Oxidation; Solids; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2009 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-3308-7

Type

conf

Filename

5200660