Title :
Nonvolatile solid-electrolyte switch embedded into Cu interconnect
Author :
Sakamoto, T. ; Tada, M. ; Banno, N. ; Tsuji, Y. ; Saitoh, Y. ; Yabe, Y. ; Hada, H. ; Iguchi, N. ; Aono, M.
Author_Institution :
Device Platforms Res. Labs., NEC Corp., Sagamihara, Japan
Abstract :
A solid-electrolyte switch (ldquoNanoBridgerdquo) has been successfully embedded into a 0.13-mum-node dual-damascene Cu interconnect using a highly reliable bilayer solid-electrolyte (TaSiO/Ta2O5) and a thin oxidation barrier, resulting in an excellent ON/OFF ratio (> 109) at a low ON resistance of 50Omega. The newly developed bilayer solid-electrolyte has improved the thermal stability during the BEOL process as well as improved electrical breakdown. The CMOS compatible NanoBridge is a promising switch to achieve high-performance and low-cost programmable LSIs.
Keywords :
CMOS integrated circuits; electrolytes; integrated circuit interconnections; large scale integration; CMOS compatible NanoBridge; Cu; electrical breakdown; integrated circuit interconnections; nonvolatile solid-electrolyte switch; resistance 50 ohm; size 0.13 mum; thermal stability; Bridge circuits; Dielectrics; Electric breakdown; Electrodes; Integrated circuit interconnections; National electric code; Oxidation; Solids; Switches; Voltage;
Conference_Titel :
VLSI Technology, 2009 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-3308-7
