Characteristics of sub 5nm tri-gate nanowire MOSFETs with single and poly Si channels in SOI structure

Sub 5 nm tri-gate nanowire MOSFET is successfully developed with good uniformity by using conventional technology in the SOI structure. Performance of the poly Si channel is compared with that of the single Si channel. On-state current of n-FET has attained to 802 uA/um for single Si channel, while 471 uA/um for poly Si channel, which is 60 % of performance of the single Si channel at L_G ~ 5 nm due to the enhancement of ballistic efficiency. At the extremely small L_G of around 5 nm, we also investigate off-leakage current with boosted BJT operation.