Title :
Design of high-performance and highly reliable nMOSFETs with embedded Si:C S/D extension stressor(Si:C S/D-E)
Author :
Chung, Steve S. ; Hsieh, E.R. ; Liu, P.W. ; Chiang, W.T. ; Tsai, S.H. ; Tsai, T.L. ; Huang, R.M. ; Tsai, C.H. ; Teng, W.Y. ; Li, C.I. ; Kuo, T.F. ; Wang, Y.R. ; Yang, C.L. ; Tsai, C.T. ; Ma, G.H. ; Chien, S.C. ; Sun, S.W.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A Novel strained nMOSFET with embedded Si:C in S/D extension stressor (Si:C S/D-E) was presented. Comparing to the bulk device, it revealed good drive current ION (+27%), high ID,sat current (+67%), enhanced channel mobility (+105%), at a lower effective substitutional carbon concentration (C%=1.1%), using the poly-gate 40 nm-node Si:C/eSiGe S/D CMOS technology. Moreover, PBTI effect was first observed in this device as a result of carbon impurity out-diffusion, which is of critically important for the design trade-off between performance and reliability.
Keywords :
MOSFET; carbon; elemental semiconductors; silicon; Si:C; carbon impurity out-diffusion; channel mobility; extension stressor; nMOSFETs; poly-gate 40 nm-node; CMOS technology; Capacitive sensors; Design engineering; Impurities; MOSFET circuits; Microelectronics; Scalability; Silicon carbide; Temperature; Tensile strain; CMOS; Positive Temperature Bias Instability; embedded SiC; strained technology;
Conference_Titel :
VLSI Technology, 2009 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-3308-7
