26 nm gate length CMOSFETs with aggressively reduced silicide position by using carbon cluster co-implanted raised source/drain extension structure

We demonstrated 26 nm gate length CMOSFETs with an aggressively reduced silicide position down to 5 nm from the gate edge realized about one decade of order junction leakage reduction, and 10% Ion improvement for both N and PFET. Carbon cluster co-implanted raised source/drain extension (SDE) structure, that enables to enhance SDE boron concentration at the silicide interface and to reduce deep halo dosage without short channel effect degradation, is a key to achieve both low parasitic resistance and low junction leakage.