Title :
Reliability of a 300-mm-compatible 3DI technology based on hybrid Cu-adhesive wafer bonding
Author :
Yu, R.R. ; Liu, F. ; Polastre, R.J. ; Chen, K.-N. ; Liu, X.H. ; Shi, L. ; Perfecto, E.D. ; Klymko, N.R. ; Chace, M.S. ; Shaw, T.M. ; Dimilia, D. ; Kinser, E.R. ; Young, A.M. ; Purushothaman, S. ; Koester, S.J. ; Haensch, W.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A reliability evaluation of a 300-mm-compatible 3DI process is presented. The structure has tungsten through-Si-vias (TSVs), a hybrid Cu/adhesive bonding interface, and a post Si-thinning Cu BEOL. The interface bonding strength, deep thermal cycles test, temperature and humidity test, and ambient permeation oxidation all show favorable results, indicating the suitability of this technology for VLSI applications.
Keywords :
VLSI; adhesive bonding; copper; integrated circuit reliability; silicon; wafer bonding; 3DI technology; Cu; Si; VLSI application; ambient permeation oxidation; deep thermal cycles test; hybrid Cu-adhesive wafer bonding; interface bonding strength; reliability evaluation; size 300 mm; tungsten through-Si-vias; Wafer bonding;
Conference_Titel :
VLSI Technology, 2009 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-3308-7
