Title :
Impact of backside Cu contamination in the 3D integration process
Author :
Hozawa, Kazuyuki ; Takeda, Kenichi ; Torii, Kazuyoshi
Author_Institution :
Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan
Abstract :
The impact of backside Cu contamination during the 3D integration process was investigated and found that Cu diffusion was significantly enhanced by stress relief and wafer thinning. The thermal scattering phenomenon of Cu is inevitable even under a low-temperature assembly process, which also caused Cu contamination. To prevent the Cu contamination, an Ar ion implantation for Cu gettering and a SiN Cu barrier is proposed.
Keywords :
argon; assembling; copper; cryogenic electronics; diffusion barriers; getters; ion implantation; silicon compounds; surface contamination; thermal analysis; wafer-scale integration; 3D integration process; Cu; SiN; backside contamination impact; copper gettering; ion implantation; low-temperature assembly process; stress relief; thermal scattering phenomenon; wafer thinning; Argon; Assembly; Degradation; Gettering; Ion implantation; Scattering; Silicon compounds; Stress; Surface contamination; Through-silicon vias;
Conference_Titel :
VLSI Technology, 2009 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-3308-7
