A metallic-CNT-tolerant carbon nanotube technology using Asymmetrically-Correlated CNTs (ACCNT)

We demonstrate carbon nanotube field effect transistors (CNFETs) using asymmetrically-correlated carbon nanotubes (ACCNT, pronounced ldquoaccentrdquo), the first demonstration of a VLSI-compatible metallic-CNT-tolerant design methodology. ACCNT CNFETs take advantage of the asymmetric correlation of CNFETs fabricated on aligned carbon nanotubes to achieve both high I_on/I_off (up to 5 times 10⁴) and high current drive (~10 + muA). We can increase metallic-CNTtolerance arbitrarily close to 100% (we easily attain 90+% in the results); in comparison, a conventional CNFET design with similar Ion was only at 19%. More than 200 ACCNT test structures and CNFETs were fabricated to demonstrate and validate the ACCNT concepts.