Title :
Room-temperature operation of transistor vertical-cavity surface-emitting laser
Author :
Yu, Xiaoyuan ; Xiang, Yingmeng ; Berggren, Jesper ; Zabel, Thomas ; Hammar, Mattias ; Akram, N. ; Shi, W. ; Chrostowski, L.
Author_Institution :
Sch. of Inf. & Commun. Technol., KTH R. Inst. of Technol., Kista, Sweden
Abstract :
The first room-temperature operation of a transistor vertical-cavity surface-emitting laser (T-VCSEL) is demonstrated. Fabricated using an epitaxial regrowth process, the T-VCSEL is electrically a pnp-type bipolar junction transistor and consists of an undoped AlGaAs/GaAs bottom DBR, an InGaAs triple-quantum-well active layer, an Si/SiO2 dielectric top DBR, and an intracavity contacting scheme with three electrical terminals. The output power is controlled by the base current in combination with the emitter-collector voltage, showing a voltage-controlled operation mode. A low threshold base-current of 0.8 mA and an output power of 1.8 mW have been obtained at room temperature. Continuous-wave operation was performed up to 50°C.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; elemental semiconductors; epitaxial growth; gallium arsenide; heterojunction bipolar transistors; indium compounds; laser beams; laser cavity resonators; laser modes; optical fabrication; quantum well lasers; silicon; silicon compounds; surface emitting lasers; AlGaAs-GaAs-InGaAs-Si-SiO2; T-VCSEL; TQW; continuous-wave operation; current 0.8 mA; dielectric top DBR; electrical pnp-type bipolar junction transistor; electrical terminals; emitter-collector voltage; epitaxial regrowth process; intracavity contacting scheme; laser output power; low threshold base-current; power 1.8 mW; room-temperature operation; temperature 293 K to 298 K; temperature 50 degC; transistor vertical-cavity surface-emitting laser; triple-quantum-well active layer; undoped bottom DBR; voltage-controlled operation mode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.4243
