Title :
Ferroelectric(Fe)-NAND flash memory with non-volatile page buffer for data center application enterprise Solid-State Drives (SSD)
Author :
Hatanaka, Teruyoshi ; Yajima, Ryoji ; Horiuchi, Takeshi ; Wang, Shouyu ; Zhang, Xizhen ; Takahashi, Mitsue ; Sakai, Shigeki ; Takeuchi, Ken
Author_Institution :
Dept. of Electrical Engineering and Information Systems, University of Tokyo, Japan
Abstract :
A ferroelectric(Fe)-NAND flash memory with a non-volatile (NV) page buffer is proposed. The data fragmentation in a random write is removed by introducing a batch write algorithm. As a result, the SSD performance can double. The NV-page buffer realizes a power outage immune highly reliable operation. With a low program/erase voltage, 6V and a high endurance, 100Million cycles, the proposed Fe-NAND is most suitable for a highly reliable high-speed low power data center application enterprise SSD.
Keywords :
Buffer storage; Degradation; Energy consumption; Ferroelectric materials; Flash memory; Latches; MOS devices; Nonvolatile memory; Solid state circuits; Voltage; Flash memory; NAND; SSD;
Conference_Titel :
VLSI Circuits, 2009 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
978-1-4244-3307-0
Electronic_ISBN :
978-4-86348-001-8
