• DocumentCode
    497978
  • Title

    High-density 3-D metal-fuse PROM featuring 1.37µm2 1T1R bit cell in 32nm high-k metal-gate CMOS technology

  • Author

    Kulkarni, Sarvesh H. ; Chen, Zhanping ; He, Jun ; Jiang, Lei ; Pedersen, Brian ; Zhang, Kevin

  • Author_Institution
    Intel Corporation, Hillsboro, OR, USA
  • fYear
    2009
  • fDate
    16-18 June 2009
  • Firstpage
    28
  • Lastpage
    29
  • Abstract
    A 4Kbit high-density PROM array design featuring a high-volume manufacturable metal-fuse technology in 32nm high-k metal-gate CMOS is introduced. In contrast to a traditional salicided polysilicon based 2-D fuse cell, the metal-fuse technology enables a 3-D cell topology with program device and fuse element stacked on each other, achieving a 1.37µm2 cell footprint. The 128-row by 32-column array with an asymmetric tunable static sense scheme can operate down to 0.5V and provides multi-bit programming capability. A 100% programming success rate at 2V-1µs condition is achieved along with security protection.
  • Keywords
    CMOS technology; Electromigration; Fuses; High K dielectric materials; High-K gate dielectrics; Logic arrays; Logic programming; MOS devices; PROM; Temperature; High-density PROM and metal fuse;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits, 2009 Symposium on
  • Conference_Location
    Kyoto, Japan
  • Print_ISBN
    978-1-4244-3307-0
  • Electronic_ISBN
    978-4-86348-001-8
  • Type

    conf

  • Filename
    5205330
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=497978