DocumentCode :
497979
Title :
A 1.25µm2 cell 32Kb electrical fuse memory in 32nm CMOS with 700mV Vddmin and parallel/serial interface
Author :
Chung, Shine ; Chung, Tao-Wen ; Ker, Po-Yao ; Hsueh, Fu-Lung
Author_Institution :
Taiwan Semiconductor Manufacturing Corp., Hsinchu, Taiwan
fYear :
2009
fDate :
16-18 June 2009
Firstpage :
30
Lastpage :
31
Abstract :
This paper presents a highly optimized 32Kb electrical fuse memory in 32nm CMOS with 1.25µm2 small cell, the smallest cell ever published. This macro has low program current of 6mA at 2.5V for 0.5?µs, high-gain sense amplifier to achieve 700mV Vddmin, and parallel/serial interfaces for high density or low pin-count applications.
Keywords :
CMOS technology; Electric resistance; Electrical resistance measurement; Fuses; Low voltage; MOS devices; Pulp manufacturing; Radiofrequency amplifiers; Semiconductor device manufacture; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits, 2009 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
978-1-4244-3307-0
Electronic_ISBN :
978-4-86348-001-8
Type :
conf
Filename :
5205331
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=497979
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