• DocumentCode
    497979
  • Title

    A 1.25µm2 cell 32Kb electrical fuse memory in 32nm CMOS with 700mV Vddmin and parallel/serial interface

  • Author

    Chung, Shine ; Chung, Tao-Wen ; Ker, Po-Yao ; Hsueh, Fu-Lung

  • Author_Institution
    Taiwan Semiconductor Manufacturing Corp., Hsinchu, Taiwan
  • fYear
    2009
  • fDate
    16-18 June 2009
  • Firstpage
    30
  • Lastpage
    31
  • Abstract
    This paper presents a highly optimized 32Kb electrical fuse memory in 32nm CMOS with 1.25µm2 small cell, the smallest cell ever published. This macro has low program current of 6mA at 2.5V for 0.5?µs, high-gain sense amplifier to achieve 700mV Vddmin, and parallel/serial interfaces for high density or low pin-count applications.
  • Keywords
    CMOS technology; Electric resistance; Electrical resistance measurement; Fuses; Low voltage; MOS devices; Pulp manufacturing; Radiofrequency amplifiers; Semiconductor device manufacture; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits, 2009 Symposium on
  • Conference_Location
    Kyoto, Japan
  • Print_ISBN
    978-1-4244-3307-0
  • Electronic_ISBN
    978-4-86348-001-8
  • Type

    conf

  • Filename
    5205331
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=497979