Title :
60-GHz hybrid transmit/receive switch using p-n diode and MOS transistors
Author :
Mao, Chuying ; Kenneth, K.O.
Author_Institution :
Silicon Microwave Integrated Circuits Research Group (SIMICS) Department of Electrical and Computer Engineering, University of Florida, 32611, USA
Abstract :
A single-pole-double-throw transmit/receive switch operating at 57~66 GHz frequency band is realized using a shunt p-n diode and shunt NMOS transistors in 130-nm CMOS technology. The switch exhibits insertion loss of ~2 dB and 3 dB for TX and RX mode at 60 GHz. Measured input 1-dB compression point is limited by the measurement setup and higher than 13 dBm, and isolation is ~20 dB at 60 GHz.
Keywords :
CMOS technology; Frequency shift keying; Impedance; Insertion loss; MOSFETs; Millimeter wave technology; P-i-n diodes; Parasitic capacitance; Switches; Switching circuits;
Conference_Titel :
VLSI Circuits, 2009 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
978-1-4244-3307-0
Electronic_ISBN :
978-4-86348-001-8
