DocumentCode :
498010
Title :
A 28.1dBm class-D outphasing power amplifier in 45nm LP digital CMOS
Author :
Xu, H. ; Palaskas, Y. ; Ravi, A. ; Sajadieh, M. ; Elmala, M. ; Soumyanath, K.
Author_Institution :
Communication Circuits Lab, Intel Corporation, Hillsboro, OR, 97124, USA
fYear :
2009
fDate :
16-18 June 2009
Firstpage :
206
Lastpage :
207
Abstract :
A 2.25GHz outphasing power amplifier is implemented in a 45nm LP digital CMOS process. The PA is designed in class-D mode for low output impedance and good linearity. The PA delivers 28.1dBm peak CW power with 19.7% system efficiency (includes all drivers). Average OFDM power is 21.4/20.3dBm with efficiency 8.0/6.5% when transmitting WiFi/WiMAX signals respectively.
Keywords :
CMOS process; Capacitors; Driver circuits; Inverters; Linearity; OFDM; Power amplifiers; Power dissipation; Voltage; WiMAX; WiMAX; class-D; outphasing; power amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits, 2009 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
978-1-4244-3307-0
Electronic_ISBN :
978-4-86348-001-8
Type :
conf
Filename :
5205371
Link To Document :
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