Analysis of Correlated Gate and Drain Random Telegraph Noise in Post-Soft Breakdown TiN/HfLaO/ ${\rm SiO}_{x}$ nMOSFETs

We investigate correlated gate (I_G) and drain (I_D) random telegraph noise phenomena observed in post breakdown regime on nMOSFET TiN/HfLaO/ SiO_x gate-stacks. We observe two different I_G-I_D correlation patterns (i.e., of the same and opposite polarities) that we attributed to charge trapping into oxygen vacancy traps of different kinds located in the SiO_x close to the Si/SiO_x interface. Results reported in this letter provide useful information for improving the understanding of I_G/I_D RTN phenomena and its impact on the reliability of post-SBD nanometer MOSFETs.