5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing

Author

Zhihua Dong ; Shuxin Tan ; Yong Cai ; Hongwei Chen ; Shenghou Liu ; Jicheng Xu ; Lu Xue ; Guohao Yu ; Yue Wang ; Desheng Zhao ; Keyu Hou ; Chen, Kevin J. ; Baoshun Zhang

Author_Institution

Key Labatory of Nanodevices & Applic., Suzhou Inst. of Nano-Tech & Nano-Bionics, Suzhou, China

Volume

49

Issue

3

fYear

2013

fDate

Jan. 31 2013

Firstpage

221

Lastpage

222

Abstract

Normally-off AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) on Si substrate were fabricated with the fluorine-based treatment technique. By employing a 20nm-thick Al₂O₃ gate dielectric deposited by atomic layer deposition, the fabricated MOS-HEMT exhibits a large positive threshold voltage of + 3.5V, a maximum gate input voltage of 15V, a maximum saturate drain current of 5.3A and an off-state breakdown voltage of 402V. The high threshold voltage and the large input voltage swing is expected to improve the electromagnetic interference immunity and safety of AlGaN/GaN MOS-HEMT power switches.

Keywords

III-V semiconductors; MOSFET; alumina; aluminium compounds; atomic layer deposition; dielectric materials; electromagnetic interference; elemental semiconductors; field effect transistor switches; gallium compounds; high electron mobility transistors; power semiconductor switches; silicon; wide band gap semiconductors; Al₂O₃; AlGaN-GaN; MOS-HEMT; MOS-HEMT power switches; Si; atomic layer deposition; current 5.3 A; electromagnetic interference immunity; fluorine-based treatment technique; gate dielectric; high threshold voltage; large input voltage swing; metal-oxide-semiconductor high electron mobility transistors; size 20 nm; voltage 3.5 V; voltage 400 V; voltage 402 V;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2012.3153

Filename

6457583