Etching depth dependence of emission properties from InGaN/GaN light emitting diodes with nanohole arrays: Analysis of strain relaxation and surface states

Author

Chang, Cheng-Yu ; Wu, Yuh-Renn

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

The effects etching depths of nanohole arrays close to or penetrate the quantum well structures are studied. Our results suggest that when the hole depth is close to the quantum well region, the surface states pinning reduces the band bending and leads to a blue shift of the emission spectrum. When the hole penetrates the quantum well region, similar effects are observed but are due to the strain relaxation in the quantum well.

Keywords

III-V semiconductors; etching; gallium compounds; light emitting diodes; nanotechnology; quantum well devices; wide band gap semiconductors; InGaN-GaN; band bending; etching depth dependence; hole depth; light emitting diodes; nanohole arrays; quantum well structures; strain relaxation; surface states; Capacitive sensors; Etching; Gallium nitride; Light emitting diodes; Nanoscale devices; Nanostructures; Optical arrays; Photonic crystals; Piezoelectric polarization; Stimulated emission; (230.3670) Light-emitting diodes; (250.5590) Quantum-well, -wire and -dot devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5224280