Title :
Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded-temperature profile
Author :
Zhao, Hongping ; Liu, Guangyu ; Li, Xiaohang ; Huang, G.S. ; Penn, S. Tafon ; Dierolf, Volkmar ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
The use of 3-layer staggered InGaN quantum wells light-emitting diodes at 520-525 nm, grown by metal-organic chemical vapor deposition with graded-temperature profile, resulted in increase in efficiency and output power by 2-times.
Keywords :
III-V semiconductors; MOCVD coatings; indium compounds; light emitting diodes; quantum well devices; wide band gap semiconductors; InGaN; graded temperature profile; light emitting diodes; metal organic chemical vapor deposition; staggered quantum well growth; wavelength 520 nm to 525 nm; Chemical technology; Chemical vapor deposition; Gallium nitride; Light emitting diodes; Optical devices; Physics; Quantum computing; Radiative recombination; Stimulated emission; Temperature; (230.3670) Light-Emitting Diodes; (230.5590) Quantum-Well, -Wire and -Dot Devices;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
