Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded-temperature profile

Author

Zhao, Hongping ; Liu, Guangyu ; Li, Xiaohang ; Huang, G.S. ; Penn, S. Tafon ; Dierolf, Volkmar ; Tansu, Nelson

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

The use of 3-layer staggered InGaN quantum wells light-emitting diodes at 520-525 nm, grown by metal-organic chemical vapor deposition with graded-temperature profile, resulted in increase in efficiency and output power by 2-times.

Keywords

III-V semiconductors; MOCVD coatings; indium compounds; light emitting diodes; quantum well devices; wide band gap semiconductors; InGaN; graded temperature profile; light emitting diodes; metal organic chemical vapor deposition; staggered quantum well growth; wavelength 520 nm to 525 nm; Chemical technology; Chemical vapor deposition; Gallium nitride; Light emitting diodes; Optical devices; Physics; Quantum computing; Radiative recombination; Stimulated emission; Temperature; (230.3670) Light-Emitting Diodes; (230.5590) Quantum-Well, -Wire and -Dot Devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5224283