DocumentCode :
499232
Title :
Scaling of average power of coherent terahertz pulses by stacking GaAs wafers
Author :
Jiang, Yi ; Ding, Yujie J. ; Zotova, Ioulia B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fYear :
2009
fDate :
2-4 June 2009
Firstpage :
1
Lastpage :
2
Abstract :
The average terahertz output power generated from stacked GaAs wafers using two CO2 lasers is scaled up by 160. The highest average output power is measured to be 29.8 muW by stacking ten wafers.
Keywords :
III-V semiconductors; gallium arsenide; gas lasers; optical pulse generation; GaAs; average power saling; coherent terahertz pulses; wafer stacking; wafers; Crystals; Gallium arsenide; Gas lasers; Gases; Laser beams; Nonlinear optics; Optical pulse generation; Power generation; Power lasers; Stacking; (190.4360) Nonlinear optics, devices; (190.4410) Nonlinear optics, parametric processes; (190.4975) Parametric processes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
Type :
conf
Filename :
5224311
Link To Document :
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