Room temperature lasing from subwavelength metal-insulator-semiconductor structures

Author

Nezhad, Maziar P. ; Simic, Aleksandar ; Bondarenko, Olesya ; Slutsky, Boris ; Mizrahi, Amit ; Feng, Liang ; Lomakin, Vitaliy ; Fainman, Yeshaiahu

Author_Institution

ECE Dept., Univ. of California San Diego, La Jolla, CA, USA

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

We report pulsed room temperature lasing from optically pumped subwavelength metal-insulator-semiconductor structures. The lasers consist of InGaAsP gain disks embedded in a SiO₂/aluminum bi-layer. Lasing at 1520 nm from a 730 nm gain core is demonstrated.

Keywords

III-V semiconductors; MIS structures; aluminium; gallium arsenide; indium compounds; laser beams; optical pumping; semiconductor lasers; silicon compounds; InGaAsP-SiO₂-Al; embedded gain disks; optically pumped MIS; pulsed room temperature lasing; subwavelength metal-insulator-semiconductor structure; temperature 293 K to 298 K; wavelength 1520 nm; Dielectrics; Laser modes; Laser theory; Metal-insulator structures; Optical filters; Optical pumping; Optical resonators; Pump lasers; Semiconductor lasers; Temperature; 130.3120; 140.5960; 160.3900; 220.4241; 250.5403; 250.5960; 260.3910;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5224322