Title :
Bloch oscillations and Zener tunneling in bulk GaAs
Author :
Kuehn, W. ; Gaal, P. ; Reimann, K. ; Woerner, M. ; Elsaesser, T. ; Hey, R.
Author_Institution :
Max-Born-Inst. fur Nichtlineare Opt. und Kurzzeitspektroskopie, Berlin, Germany
Abstract :
Intense terahertz transients induce in GaAs at T = 300 K coherent ballistic electron motions exploring the conduction band through half the Brillouin zone. At T = 80 K we observe terahertz driven tunneling from the valence into the conduction band.
Keywords :
III-V semiconductors; Zener effect; conduction bands; gallium arsenide; nonlinear optics; tunnelling; valence bands; Bloch oscillations; Brillouin zone; GaAs; Zener tunneling; coherent ballistic electron motions; conduction band; temperature 300 K; temperature 80 K; terahertz transients; tunneling; valence band; Electron optics; Gallium arsenide; Infrared spectra; Nonlinear optics; Optical pulses; Optical scattering; Optical sensors; Optical superlattices; Temperature; Tunneling; (190.5970) Semiconductor nonlinear optics including MQW; (300.6270) Spectroscopy, far infrared;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
