DocumentCode
499357
Title
Observation of clamping of photoluminescence intensities from nonlinear degenerate electron gas in InN
Author
Xu, Guibao ; Ding, Yujie J. ; Zotova, Ioulia B. ; Stutz, Charles E. ; Diggs, Darnell E. ; Fernelius, Nils ; Hopkins, F. Ken ; Gallinat, Chad S. ; Koblmüller, Gregor ; Speck, James S.
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
We observed that photoluminescence intensities clamped at certain values as the pump intensity was increased, due to the presence of nonlinear degenerate electron gas and saturation of photogenerated and localized holes in InN.
Keywords
electron gas; indium compounds; photoluminescence; wide band gap semiconductors; InN; localized holes; nonlinear degenerate electron gas; photogenerated holes; photoluminescence intensities clamping; Clamps; Electrons; Gallium nitride; Laboratories; Manufacturing; Nonlinear optics; Optical films; Photoluminescence; Plasma temperature; Substrates; (190.4350) Nonlinear optics at surfaces; (190.5970) Semiconductor nonlinear optics including MQW;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5224437
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