DocumentCode :
499357
Title :
Observation of clamping of photoluminescence intensities from nonlinear degenerate electron gas in InN
Author :
Xu, Guibao ; Ding, Yujie J. ; Zotova, Ioulia B. ; Stutz, Charles E. ; Diggs, Darnell E. ; Fernelius, Nils ; Hopkins, F. Ken ; Gallinat, Chad S. ; Koblmüller, Gregor ; Speck, James S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fYear :
2009
fDate :
2-4 June 2009
Firstpage :
1
Lastpage :
2
Abstract :
We observed that photoluminescence intensities clamped at certain values as the pump intensity was increased, due to the presence of nonlinear degenerate electron gas and saturation of photogenerated and localized holes in InN.
Keywords :
electron gas; indium compounds; photoluminescence; wide band gap semiconductors; InN; localized holes; nonlinear degenerate electron gas; photogenerated holes; photoluminescence intensities clamping; Clamps; Electrons; Gallium nitride; Laboratories; Manufacturing; Nonlinear optics; Optical films; Photoluminescence; Plasma temperature; Substrates; (190.4350) Nonlinear optics at surfaces; (190.5970) Semiconductor nonlinear optics including MQW;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
Type :
conf
Filename :
5224437
Link To Document :
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