Title :
InP based terahertz quantum cascade lasers with 4 quantum well active region design
Author :
Fischer, Milan ; Scalari, Giacomo ; Amanti, Maria ; Beck, Mattias ; Walther, Christoph ; Faist, Jérôme
Author_Institution :
Inst. for Quantum Electron., ETH Zurich, Zurich, Switzerland
Abstract :
We present a terahertz quantum cascade laser based on InGaAs/InAlAs/InP material system with double metal waveguide that reaches operating temperature of 123 K with continuous wave power output 4.5 mW at 10 K and slope efficiency comparable to GaAs/AlGaAs counterparts.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum cascade lasers; terahertz wave generation; InGaAs-InAlAs-InP; InGaAs/InAlAs/InP material system; double metal waveguide; power 4.5 mW; quantum well active region; slope efficiency; temperature 10 K; temperature 123 K; terahertz quantum cascade lasers; Gallium arsenide; Indium phosphide; Optical design; Optical materials; Optical scattering; Optical waveguides; Power generation; Quantum cascade lasers; Temperature; Waveguide lasers; 140.3070; 140.5965; 250.596;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
