Title :
InAsyP1-y metamorphic buffer layers (MBLs) on InP substrates for mid-IR diode lasers
Author :
Kirch, J. ; Garrod, T. ; Kim, Sungho ; Park, J.H. ; Shin, J.C. ; Mawst, L.J. ; Kuech, T.F. ; Song, X. ; Babcock, S.E. ; Vurgaftman, I. ; Meyer, J.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Wisconsin-Madison, Madison, WI, USA
Abstract :
InAs QWs grown with InAsyP1-y metamorphic buffer layers on InP substrates demonstrate mid-IR emission. A novel Al-free InAsP/InGaAs SCH design provides improved carrier confinement, allowing InAs QW laser emission near lambda~2.5 mum @77 K.
Keywords :
III-V semiconductors; buffer layers; gallium arsenide; indium compounds; laser beams; quantum well lasers; semiconductor quantum wells; InAsP-InGaAs; InP; QW laser emission; carrier confinement; metamorphic buffer layer; mid-IR diode laser; mid-IR emission; semiconductor lasers; separate confinement heterostructure design; temperature 77 K; Buffer layers; Carrier confinement; Chemical lasers; Gas lasers; Indium gallium arsenide; Indium phosphide; Quantum cascade lasers; Semiconductor lasers; Stimulated emission; Substrates; (140.3070) Infrared and far-infrared lasers; (140.5960) Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
