• DocumentCode
    499529
  • Title

    The use of polydimethylsiloxane concave microstructures arrays to enhance light extraction efficiency of InGaN quantum wells light-emitting diodes

  • Author

    Ee, Yik-Khoon ; Kumnorkaew, Pisist ; Arif, Ronald A. ; Tong, Hua ; Gilchrist, James F. ; Tansu, Nelson

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
  • fYear
    2009
  • fDate
    2-4 June 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Novel approach to improve light extraction efficiency of InGaN-based light emitting diodes with polydimethylsiloxane concave microstructures arrays was demonstrated, which leads to enhancement of extraction efficiency by 1.60-times in good agreement with simulation.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; polymers; quantum well devices; wide band gap semiconductors; InGaN; light extraction efficiency; polydimethylsiloxane concave microstructures arrays; quantum wells light-emitting diodes; Computational modeling; Lenses; Light emitting diodes; Microoptics; Microstructure; Optical arrays; Optical refraction; Optical scattering; Optical variables control; Stimulated emission; (230.0250) Optoelectronics; (230.3670) Light-Emitting Diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-869-8
  • Electronic_ISBN
    978-1-55752-869-8
  • Type

    conf

  • Filename
    5224614