Title :
Semiconductor guided-wavewavelength conversion devices
Author_Institution :
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
Fabrication processes for periodically inverted AlGaAs and AlGaP waveguides have been developed and used for fabrication of quasi-phase-matched wavelength conversion devices. We have succeeded in achieving considerably high conversion efficiencies in AlGaAs-based devices and the first observation of a quasi-phase-matched parametric interaction in a GaP-based device.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical waveguides; AlGaAs; AlGaP; high conversion efficiencies; periodically inverted; quasi-phase-matched parametric interaction; semiconductor guided; wave wavelength conversion devices; Corrugated surfaces; Epitaxial growth; Gallium arsenide; Optical device fabrication; Optical devices; Optical harmonic generation; Optical waveguides; Optical wavelength conversion; Waveguide discontinuities; Wavelength conversion; (130.5990) Semiconductors; (190.2620) Harmonic generation and mixing;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
