Optimised LNA for wireless link in brain machine interface applications

Presentsed is an optimised design for the RF CMOS low-noise amplifier (LNA) as the analogue front-end circuit for the brain-machine interface´s transceiver with an emphasis on the tradeoff between gain, noise and power consumption. A 360 nm cascode LNA operating in 404 MHz of the Medical Implant Communication Service frequency band is designed to demonstrate good performance achievable in the microwatt range. Overdrive voltage of the transistors is approximately 100 mV to exploit the high g_m/I_D achieving low power consumption, while avoiding performance degradation associated with the subthreshold region.