Title :
Beam shaping of GaN/InGaN vertical-injection light emitting diodes via high-aspect-ratio nanorod arrays
Author :
Tsai, M.A. ; Yu, Peichen ; Chao, C.L. ; Chiu, C.H. ; Kuo, H.C. ; Lu, T.C. ; Wang, S.C. ; Huang, J.J.
Author_Institution :
Dept. of Electrophys., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
The enhanced light extraction and collimated output beam profile from GaN/InGaN vertical-injection light emitting diodes are demonstrated utilizing high-aspect-ratio nanorod arrays. The nanorod arrays are patterned by self-assembled silica spheres, followed by inductively-coupled-plasma reactive-ion-etching.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; nanopatterning; nanophotonics; optical arrays; self-assembly; silicon compounds; sputter etching; wide band gap semiconductors; GaN-InGaN; SiO2; beam collimation; beam shaping; high-aspect-ratio nanorod arrays; inductively-coupled-plasma reactive-ion-etching; light extraction; nanopatterning; self-assembled silica spheres; vertical-injection light emitting diodes; Etching; Gallium nitride; Light emitting diodes; Optical arrays; Optical collimators; Optical surface waves; Photonics; Self-assembly; Silicon compounds; Substrates; 220.4241; 230.3670;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
