• DocumentCode
    499656
  • Title

    Pockels effect in short period silicon germanium superlattices

  • Author

    Khurgin, J.B. ; Pruessner, M.W. ; Stievater, T.H. ; Rabinovich, W.S.

  • Author_Institution
    Johns Hopkins Univ., Baltimore, MD, USA
  • fYear
    2009
  • fDate
    2-4 June 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We introduce a method for calculating Pockels coefficients in SiGe superlattices. We show that the Pockels effect in (Si)1(Ge)1 superlattices is half as strong as in GaAs. This opens a path to efficient CMOS-compatible modulators.
  • Keywords
    Ge-Si alloys; III-V semiconductors; Pockels effect; gallium arsenide; integrated optoelectronics; optical modulation; optical multilayers; superlattices; (Si)1(Ge)1; CMOS-compatible modulators; GaAs; Pockels effect; integrated electronic circuit; short period silicon germanium superlattices; Frequency conversion; Gallium arsenide; Germanium silicon alloys; Nonlinear optics; Optical interconnections; Optical modulation; Optical superlattices; Phase modulation; Semiconductor superlattices; Silicon germanium; 130.4110 Modulators; 130.5990 Semiconductors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-869-8
  • Electronic_ISBN
    978-1-55752-869-8
  • Type

    conf

  • Filename
    5224899
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=499656