Title :
Pockels effect in short period silicon germanium superlattices
Author :
Khurgin, J.B. ; Pruessner, M.W. ; Stievater, T.H. ; Rabinovich, W.S.
Author_Institution :
Johns Hopkins Univ., Baltimore, MD, USA
Abstract :
We introduce a method for calculating Pockels coefficients in SiGe superlattices. We show that the Pockels effect in (Si)1(Ge)1 superlattices is half as strong as in GaAs. This opens a path to efficient CMOS-compatible modulators.
Keywords :
Ge-Si alloys; III-V semiconductors; Pockels effect; gallium arsenide; integrated optoelectronics; optical modulation; optical multilayers; superlattices; (Si)1(Ge)1; CMOS-compatible modulators; GaAs; Pockels effect; integrated electronic circuit; short period silicon germanium superlattices; Frequency conversion; Gallium arsenide; Germanium silicon alloys; Nonlinear optics; Optical interconnections; Optical modulation; Optical superlattices; Phase modulation; Semiconductor superlattices; Silicon germanium; 130.4110 Modulators; 130.5990 Semiconductors;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
