Internal quantum efficiency and non-radiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

Author

Dai, Q. ; Schubert, M.F. ; Kim, M.H. ; Kim, J.K. ; Schubert, E.F. ; Koleske, D.D. ; Crawford, M.H. ; Lee, S.R. ; Fischer, A.J. ; Thaler, G. ; Banas, M.A.

Author_Institution

Future Chips Constellation, Rensselaer Polytech. Inst., Troy, NY, USA

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

Room-temperature photoluminescence measurements are performed on GaInN/GaN multiple quantum wells grown on GaN-on-sapphire templates with different threading-dislocation densities. The internal quantum efficiencies as a function of carrier concentration and the non-radiative coefficients are obtained.

Keywords

III-V semiconductors; carrier density; electron-hole recombination; gallium compounds; photoluminescence; quantum wells; sapphire; wide band gap semiconductors; Al₂O₃; GaInN-GaN; GaN-on-sapphire; carrier concentration; internal quantum efficiency; multiple quantum well; nonradiative recombination coefficient; photoluminescence measurement; temperature 293 K to 298 K; threading-dislocation density; Density measurement; Extraterrestrial measurements; Gain measurement; Gallium nitride; Light emitting diodes; Photoluminescence; Physics; Quantum computing; Quantum well devices; Radiative recombination; (230.5590) Quantum-well, -wire and -dot devices; (250.5230) Photoluminescence;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5224900