DocumentCode :
499714
Title :
Demonstration of laser operation at room-temperature of an Sb-based mid-infrared multi-quantum-well structure monolithically grown on a Silicon substrate
Author :
Rodriguez, J.B. ; Cerutti, L. ; Tournié, E.
Author_Institution :
Inst. d´´Electron. du Sud (IES), Univ. Montpellier 2, Montpellier, France
fYear :
2009
fDate :
2-4 June 2009
Firstpage :
1
Lastpage :
2
Abstract :
We report on the fabrication and characterization of mid-infrared Sb-based lasers grown on Silicon substrates. We demonstrate room-temperature operation with low threshold current densities (~1.5 kA/cm2), and pulsed mode up to a duty-cycle of 10%.
Keywords :
current density; elemental semiconductors; quantum well lasers; silicon; Sb-based mid-infrared multi-quantum-well structure; Si; laser operation; low threshold current densities; silicon substrate; Gas lasers; Laser modes; Molecular beam epitaxial growth; Optical device fabrication; Optical materials; Optical pulses; Semiconductor lasers; Silicon; Substrates; Threshold current; (250.5960) Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
Type :
conf
Filename :
5225070
Link To Document :
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