• DocumentCode
    499725
  • Title

    Thin film p-ridge n-stripe III–V laser broad area metal-metal bonded to silicon

  • Author

    Palit, Sabarni ; Kirch, J. ; Mawst, L. ; Kuech, T. ; Jokerst, N.M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Duke Univ., Durham, NC, USA
  • fYear
    2009
  • fDate
    2-4 June 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A p-ridge single quantum well thin film laser has been metal/metal bonded onto silicon for good thermal dissipation and low threshold current. The threshold current density is 244 A/cm2.
  • Keywords
    III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; metallisation; optical films; quantum well lasers; semiconductor thin films; silicon; wide band gap semiconductors; InGaAs-GaAs-GaAsP; Si; broad area single quantum well thin film laser; metal-metal bonding; silicon; thermal dissipation; thin film p-ridge n-stripe III-V laser; threshold current density; Bonding; Etching; Gallium arsenide; III-V semiconductor materials; Quantum well lasers; Semiconductor lasers; Semiconductor thin films; Silicon; Substrates; Threshold current; (250.5960) Semiconductor lasers; (310.6845) Thin Film Devices and applications;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-869-8
  • Electronic_ISBN
    978-1-55752-869-8
  • Type

    conf

  • Filename
    5225082
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=499725