Title :
InP/AlGaInP 730nm emission quantum dot lasers
Author :
Al-Ghamdi, M.S. ; Smowton, P.M. ; Shutts, S. ; Hutchings, M. ; Blood, P. ; Krysa, A.B.
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
Abstract :
We describe growth and wafer design improvements to reduce 300 K threshold current density to 165 Acm-2 for 2 mm long laser with uncoated facets and, using sophisticated optical and electrical characterisation, we demonstrate how this is achieved.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum dot lasers; semiconductor quantum dots; InP-AlGaInP; electrical characterisation; optical characterisation; quantum dot laser; size 2 mm; threshold current density; uncoated facet; wafer design improvement; wavelength 730 nm; Absorption; Indium phosphide; Optical materials; Pulsed laser deposition; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Stimulated emission; Temperature; Threshold current; (250.5590) Quantum well, -wire and -dot devices; (250.5960) Semiconductor laser;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
