• DocumentCode
    499836
  • Title

    Near infrared optical upconverter based on i-In0.53Ga0.47As/C60 photovoltaic junction

  • Author

    Chen, Jun ; Ban, Dayan ; Helander, Michael G. ; Lu, Zhenghong ; Graf, Marcel ; SpringThorpe, Anthony J. ; Liu, H.C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada
  • fYear
    2009
  • fDate
    2-4 June 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report a near-infrared to visible-light optical upconverter by the integration of an i-In0.53Ga0.47As/C60 junction and organic light emitting diode. This device shows the photovoltaic effect of i-In0.53Ga0.47As/C60 junction and application in optical upconverter.
  • Keywords
    III-V semiconductors; carbon; gallium arsenide; indium compounds; organic light emitting diodes; photovoltaic effects; In0.53Ga0.47As-C60; near infrared optical upconverter; organic light emitting diode; photovoltaic effect; photovoltaic junction; visible light; Indium gallium arsenide; Indium phosphide; Integrated optics; Lighting; Optical devices; Optical imaging; Organic light emitting diodes; Photovoltaic effects; Pixel; Stimulated emission; 040.3060; 130.0250; 130.3120; 250.3140;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-869-8
  • Electronic_ISBN
    978-1-55752-869-8
  • Type

    conf

  • Filename
    5225197
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=499836