DocumentCode :
499836
Title :
Near infrared optical upconverter based on i-In0.53Ga0.47As/C60 photovoltaic junction
Author :
Chen, Jun ; Ban, Dayan ; Helander, Michael G. ; Lu, Zhenghong ; Graf, Marcel ; SpringThorpe, Anthony J. ; Liu, H.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada
fYear :
2009
fDate :
2-4 June 2009
Firstpage :
1
Lastpage :
2
Abstract :
We report a near-infrared to visible-light optical upconverter by the integration of an i-In0.53Ga0.47As/C60 junction and organic light emitting diode. This device shows the photovoltaic effect of i-In0.53Ga0.47As/C60 junction and application in optical upconverter.
Keywords :
III-V semiconductors; carbon; gallium arsenide; indium compounds; organic light emitting diodes; photovoltaic effects; In0.53Ga0.47As-C60; near infrared optical upconverter; organic light emitting diode; photovoltaic effect; photovoltaic junction; visible light; Indium gallium arsenide; Indium phosphide; Integrated optics; Lighting; Optical devices; Optical imaging; Organic light emitting diodes; Photovoltaic effects; Pixel; Stimulated emission; 040.3060; 130.0250; 130.3120; 250.3140;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
Type :
conf
Filename :
5225197
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=499836
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