DocumentCode
499866
Title
Weak coupling of monolayer lead sulfide quantum dots to silicon photonic crystal cavities at near-infrared wavelengths
Author
Bose, R. ; Gao, J. ; Sun, F.W. ; McMillan, J.F. ; Yang, X. ; Chen, C. ; Wong, C.W.
Author_Institution
Opt. Nanostruct. Lab., Columbia Univ., New York, NY, USA
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
We present experimental analysis of weak coupling for monolayer lead sulfide quantum dots coupled to silicon photonic crystal cavities between 4 K and room temperature, as well as power-saturation measurements of dots at 4 K.
Keywords
II-VI semiconductors; elemental semiconductors; lead compounds; nanophotonics; photonic crystals; semiconductor quantum dots; silicon; PbS; Si; monolayer lead sulfide quantum dots; power-saturation measurements; silicon photonic crystal cavities; temperature 293 K to 298 K; temperature 4 K; weak coupling; Electrodynamics; Excitons; Optical coupling; Photonic crystals; Power engineering and energy; Quantum dots; Quantum mechanics; Silicon; Spontaneous emission; Temperature; (270.5580) Quantum electrodynamics; (350.4238) Nanophotonics and photonic crystals;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5225231
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