Title :
Sub-kHz RF electrical linewidth from a 10GHz passively mode-locked quantum-dot laser diode
Author :
Carpintero, G. ; Thompson, M.G. ; Penty, R.V. ; White, I.H.
Author_Institution :
Univ. Carlos III de Madrid, Leganes, Spain
Abstract :
A packaged 10 GHz monolithic two-section quantum-dot mode-locked laser is presented, with record narrow 500 Hz RF electrical linewidth for passive mode-locking. Single sideband noise spectra show 147 fs integrated timing jitter over the 4 MHz-80 MHz frequency range.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; jitter; laser beams; laser mode locking; laser noise; quantum dot lasers; GaAs; InGaAs-GaAs; RF electrical linewidth; frequency 10 GHz; frequency 4 MHz to 80 MHz; frequency 500 Hz; integrated timing jitter; monolithic two-section quantum-dot mode-locked laser; quantum dot laser diodes; single sideband noise spectra; time 147 fs; Diodes; Laser mode locking; Laser noise; Noise measurement; Packaging; Phase measurement; Phase noise; Quantum dot lasers; Radio frequency; Timing jitter; (140.4050) Mode-locked lasers; (230.5590) Quantum-well, -wire and -dot devices;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
