Tunneling-injection high-power 1060-nm quantum dot laser with improved temperature stability

Author

Pavelescu, E.-M. ; Gilfert, C. ; Reithmaier, J.P. ; Martin-Minguez, A. ; Esquivias, I.

Author_Institution

Inst. of Nanostrcture Technol. & Analytics (INA), Univ. of Kassel, Kassel, Germany

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

High-power 1060 nm quantum dot laser material was developed with tunnel injection quantum well active zones. This new type of laser material showed an improved internal efficiency (94 %) and allowed output power in excess of 4.4 W (limited by the current source) with a high characteristic temperature (197 K) for 100 mum broad area lasers.

Keywords

laser beams; optical materials; quantum dot lasers; semiconductor quantum wells; thermo-optical effects; broad area lasers; efficiency 94 percent; high-characteristic temperature; high-power quantum dot laser material; temperature stability; tunnel injection quantum well active zones; wavelength 100 mum; wavelength 1060 nm; Frequency; Laser stability; Optical materials; Power generation; Power lasers; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Temperature; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5225236