The bandwidth-efficiency product enhancement of GaN based photodiodes by launching a low-temperature-grown recombination center in photo-absorption region

Author

Guol, S.-H. ; Lee, M.L. ; Lin, C.-S. ; Sheu, J.K. ; Wu, Y.-S. ; Sun, C.-K. ; Kuo, C.H. ; Tun, C.J. ; Shi, J.-W.

Author_Institution

Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

We demonstrated a GaN-based p-i-n photodiode by inserting a thin low-temperature-grown-GaN layer between p-type Al_0.2Ga_0.8N window and intrinsic GaN layer. As compared with control device, our demonstrated one can achieve 3 fold bandwidth-efficiency-products improvement.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; p-i-n photodiodes; photoexcitation; semiconductor epitaxial layers; wide band gap semiconductors; Al_0.2Ga_0.8N-GaN; Recombination Center; bandwidth-efficiency product enhancement; epitaxial layer; low-temperature growth; p-i-n photodiode; photo-absorption region; Aluminum gallium nitride; Bandwidth; Degradation; Gallium nitride; Optical pulse generation; Photodiodes; Photonics; Pulse measurements; Radiative recombination; Wavelength measurement; (040.7190) Ultraviolet; (230.5170) Photodiode;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5225255