Recent progress in electrically pumped blue GaN-based VCSELs

Author

Wang, Shing-Chung ; Lu, Tien-Chang ; Kuo, Hao-Chung

Author_Institution

Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

Recent progress on fabrication technology and demonstration of current injection GaN-based blue VCSELs are presented. Performance of current injection blue VCSELs with threshold current of 1.4 mA and emission wavelength of 462 nm are described.

Keywords

III-V semiconductors; gallium compounds; laser cavity resonators; optical fabrication; semiconductor lasers; spontaneous emission; surface emitting lasers; wide band gap semiconductors; GaN; continuous-wave laser; current 1.4 mA; current injection VCSEL; electrically pumped blue laser; fabrication technology; spontaneous emission; vertical-cavity surface-emitting laser; wavelength 462 nm; Distributed Bragg reflectors; Gallium nitride; Indium tin oxide; Optical buffering; Optical device fabrication; Optical pumping; Optical superlattices; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers; (140.7270) Vertical emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5225288