Bias-controlled coherent acoustic phonon generation in InGaN/GaN multiple-quantum-wells light emitting diodes

Author

Wang, Pei-Hsun ; Wen, Yu-Chieh ; Guol, Shi-Hao ; Lin, Hung-Cheng ; Cheng, Peng-Ren ; Shi, Jin-Wei ; Chyi, Jen-Inn ; Lai, Chih-Ming ; Sun, Chi-Kuang

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

We demonstrate the control of coherent acoustic phonon generation by applying voltage across InGaN/GaN multiple-quantum-wells light emitting diodes (LEDs). The acoustic phonons oscillation can be switched off by increasing the reverse bias up to -25 V.

Keywords

acousto-optical effects; gallium compounds; indium compounds; light emitting diodes; phonons; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; coherent acoustic phonon generation; multiple-quantum-wells light emitting diodes; reverse bias; Absorption; Acoustic emission; Gallium nitride; Light emitting diodes; Optical buffering; Optical harmonic generation; Optical sensors; Phonons; Quantum well devices; Ultrafast optics; (040.4200) Multiple quantum well; (280.3375) Laser induced ultrasonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5225313