DocumentCode
499942
Title
The differential efficiency of InP quantum dot lasers
Author
Edwards, Gareth T. ; Smowton, Peter M.
Author_Institution
Cardiff Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
We demonstrate the origin of, and quantify the contributions to, the poor external differential efficiency we observe in InP quantum dot lasers. Injection efficiency limits the internal differential quantum efficiency to 50%.
Keywords
III-V semiconductors; indium compounds; quantum dot lasers; InP; external differential efficiency; injection efficiency; internal differential quantum efficiency; quantum dot laser; Indium phosphide; Laser modes; Quantum dot lasers; Quantum dots; Quantum well lasers; Semiconductor lasers; Spontaneous emission; Stationary state; Stimulated emission; Threshold current; (250.5590) Quantum-well, -wire and -dot devices; (250.5960) Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5225315
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