DocumentCode
499976
Title
Ultrafast relaxation dynamics in GaN nanowires
Author
Upadhya, P.C. ; Li, Q. ; Wang, G.T. ; Fischer, A.J. ; Taylor, A.J. ; Prasankumar, R.P.
Author_Institution
Center for Integrated Nanotechnol., Los Alamos Nat. Lab., Los Alamos, NM, USA
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
Time-resolved optical measurements on GaN nanowires give insight into carrier relaxation dynamics on a femtosecond timescale, allowing us to understand the nature of defect states present in the nanostructure.
Keywords
III-V semiconductors; carrier relaxation time; gallium compounds; high-speed optical techniques; nanophotonics; nanowires; time resolved spectra; GaN; carrier relaxation dynamics; femtosecond timescale; nanostructure defect state; nanowires; time-resolved optical measurement; ultrafast optical spectroscopy; Gallium nitride; Integrated optics; Laboratories; Nanowires; Optical pulse generation; Optical pumping; Pulse amplifiers; Substrates; Temperature; Ultrafast optics; (320.7120) Ultrafast phenomena; (320.7130) Ultrafast processes in condensed matter;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5225354
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