Bright photoluminescence from non-tapered InN nanowires grown on si by molecular beam epitaxy

Author

Chang, Y.-L. ; Fatehi, A. ; Mi, Z.

Author_Institution

Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

We have achieved superior quality non-tapered InN nanowires on Si(111) by molecular beam epitaxy, which are free of dislocations and exhibit bright photoluminescence at room-temperature and significantly reduced spectral broadening (linewidth~18.5 meV at 77 K).

Keywords

III-V semiconductors; indium compounds; molecular beam epitaxial growth; nanowires; photoluminescence; semiconductor growth; spectral line broadening; InN; bright photoluminescence; molecular beam epitaxy; nontapered nanowires; room temperature; spectral broadening; temperature 293 K to 298 K; temperature 77 K; Biomedical optical imaging; Indium; Molecular beam epitaxial growth; Nanowires; Optical devices; Photoluminescence; Plasma temperature; Scanning electron microscopy; Semiconductor materials; Substrates; 160.4236 Nanomaterials; 160.6000 Semiconductor materials; 230.5590 Quantum-well, -wire and -dot devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5225355