• DocumentCode
    499988
  • Title

    Laterally intermixed quantum structure for carrier confinement of VCSELs

  • Author

    Sugawara, Yuta ; Miyamoto, Tomoyuki

  • Author_Institution
    P&I Lab., Tokyo Inst. of Technol., Yokohama, Japan
  • fYear
    2009
  • fDate
    2-4 June 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Quantum structure intermixing from lateral direction of the mesa sidewall is proposed for VCSELs. Ith decrease of 70% and etad increase of 75% were achieved by suppression of the surface recombination in the post-type VCSEL.
  • Keywords
    laser cavity resonators; surface emitting lasers; surface recombination; carrier confinement; laterally intermixed quantum structure; mesa sidewall; post-type VCSEL; surface recombination suppression; vertical cavity surface emitting lasers; Carrier confinement; Distributed Bragg reflectors; Fabrication; Optical films; Optical interconnections; Optical sensors; Photonic band gap; Radiative recombination; Surface emitting lasers; Vertical cavity surface emitting lasers; (230.4000) Microstructure fabrication; (250.7260) Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-869-8
  • Electronic_ISBN
    978-1-55752-869-8
  • Type

    conf

  • Filename
    5225366
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=499988