• DocumentCode
    499991
  • Title

    Four-well highly strained Quantum Cascade Lasers grown by metal-organic chemical vapor deposition

  • Author

    Hsu, Allen ; Hu, Qing ; Williams, Benjamin

  • Author_Institution
    Res. Lab. of Electron., Massachusetts Inst. of Technol., Cambridge, MA, USA
  • fYear
    2009
  • fDate
    2-4 June 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrate a novel four-well injectorless design with short wavelength (5.5 mum) and room temperature operation utilizing highly strained Ga0.35In0.65As/Al0.70In0.30As (0.8/-1.5%) quantum wells.
  • Keywords
    MOCVD; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum cascade lasers; GaInAs-AlInAs; four-well injectorless design; highly strained quantum cascade laser; highly strained quantum wells; lasing threshold; metal-organic chemical vapor deposition; temperature 293 K to 298 K; wavelength 5.5 mum; Capacitive sensors; Chemical vapor deposition; Electrons; Indium phosphide; Laboratories; Low voltage; Power measurement; Quantum cascade lasers; Sputter etching; Temperature; (140.5965) Semiconductor lasers, quantum cascade;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-869-8
  • Electronic_ISBN
    978-1-55752-869-8
  • Type

    conf

  • Filename
    5225369
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=499991