Title :
Long-wavelength BTJ-VCSELs with improved modulation bandwidth and temperature range
Author :
Hofmann, W. ; Müller, M. ; Böhm, G. ; Rosskopf, J. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
Abstract :
InP-based, long-wavelength VCSELs utilizing a buried tunnel junction (BTJ), emitting at 1.55 mum with improved active region and reduced parasitics are demonstrated. A superior modulation-bandwidth >10 GHz is achieved up to 85degC. Potential bit-rates of 12.5 or even 17 Gb/s are feasible for cost-effective 100 G Ethernet solutions at metro-range.
Keywords :
III-V semiconductors; indium compounds; optical modulation; optical transmitters; surface emitting lasers; BTJ-VCSEL; Ethernet; buried tunnel junction; modulation bandwidth; wavelength 1.55 mum; Apertures; Bandwidth; Ethernet networks; Frequency; Optical modulation; Optical waveguides; Parasitic capacitance; Temperature distribution; Threshold current; Vertical cavity surface emitting lasers; (060.4080) Modulation; (060.4510) Optical communications; (250.7260) VCSELs;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
