32 Gb/s transmission experiments using high speed 850 nm VCSELs

Author

Westbergh, Petter ; Gustavsson, Johan S. ; Haglund, Åsa ; Larsson, Anders ; Hopfer, Friedhelm ; Bimberg, Dieter ; Joel, Andrew

Author_Institution

Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

We demonstrate error free transmission at bit rates up to 32 Gb/s at room temperature and 25 Gb/s at 85degC using a 9 mum oxide aperture 850 nm VCSEL. The VCSEL design is optimized for high speed operation by minimizing parasitics, reducing self-heating, and using strained InGaAs quantum wells to improve differential gain.

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; laser beams; laser cavity resonators; optical transmitters; quantum well lasers; surface emitting lasers; InGaAs; bit rate 25 Gbit/s; bit rate 32 Gbit/s; differential gain; error free transmission; high-speed VCSEL; optical design optimisation; oxide aperture VCSEL; quantum well laser; temperature 293 K to 298 K; temperature 85 degC; vertical cavity surface emitting laser; wavelength 850 nm; Apertures; Bit rate; Current density; Distributed Bragg reflectors; Epitaxial layers; Fabrication; Indium gallium arsenide; Optical attenuators; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5225411