DocumentCode
500036
Title
Inverse-quantum-engineering: A new methodology for designing THz QCLs for basic and applied research
Author
Waldmueller, Inés ; Wanke, Michael C. ; Lerttamrab, Maytee ; Allen, Dan ; Chow, Weng W.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
We demonstrate the general capabilities of the developed methodology by tuning the emission frequency of a GaAs/AlxGa1-xAs THz QCL over a frequency range of 2.9 THz, and the Al fraction over a range of 0.17.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser tuning; quantum cascade lasers; submillimetre wave lasers; GaAs-AlxGa1-xAs; THz QCL design; emission frequency tuning; frequency 2.9 THz; inverse-quantum-engineering; terahertz quantum cascade laser; Design methodology; Frequency; Laser theory; Laser transitions; Laser tuning; Optical control; Optical design; Optical scattering; Particle scattering; Quantum cascade lasers; (230.5590) Quantum-well devices; 140.3070 Infrared and far-infrared lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5225415
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