Title :
Anti-Stokes photoluminescence from n-type free-standing GaN based on competing two-photon absorption and phonon-assisted absorption
Author :
Tripathy, Suvranta K. ; Ding, Yujie J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
Mechanisms for anti-Stokes photoluminescence observed at room temperature from n-type free-standing GaN grown by MOCVD have been attributed by us to the competition between two-photon absorption and phonon-assisted absorption.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; phonons; photoluminescence; two-photon processes; wide band gap semiconductors; GaN; MOCVD; anti-Stokes photoluminescence; longitudinal-optical phonon; n-type free-standing gallium nitride; phonon-assisted absorption; red shift; two-photon absorption; Absorption; Digital audio players; Gallium nitride; Laser excitation; Optical films; Optical pumping; Photoluminescence; Solid lasers; Spectroscopy; Temperature; (190.7220) Upconversion; (250.5230) Photoluminescence; 190.4180 Multiphoton processes;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
