DocumentCode
500196
Title
CMOS-integrated small-capacitance germanium waveguide photodetector for optical interconnects
Author
Assefa, Solomon ; Xia, Fengnian ; Bedell, S.W. ; Zhang, Ying ; Topuria, Teya ; Rice, Philip M. ; Vlasov, Yurii A.
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
Compact germanium waveguide photodetector with 38 fF capacitance, 40 Gbps bandwidth and 0.4 A/W responsivity is demonstrated. High-quality Ge-on-insulator single-crystalline layer was monolithically integrated into front-end CMOS process by lateral seeded crystallization.
Keywords
CMOS integrated circuits; optical interconnections; optical waveguides; photodetectors; CMOS-integrated small-capacitance germanium waveguide photodetector; bit rate 40 Gbit/s; capacitance 38 fF; optical interconnects; single-crystalline layer; Bandwidth; CMOS process; Crystallization; Dark current; Germanium; Optical interconnections; Optical waveguides; Parasitic capacitance; Photodetectors; Wavelength measurement; (040.5160) Photodetectors; (130.0250) Optoelectronics; (200.4650) Optical interconnects;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5225578
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