Room temperature, continuous wave operation of an Sb-based laser grown on GaAs substrate

We report on the first Sb-based type-I laser grown on GaAs substrate operating continuous-wave around 2.2 mum at room-temperature. The device was grown using solid-source molecular beam epitaxy and comprised two GaInAsSb quantum-wells embedded in AlGaAsSb barriers. Despite the large lattice-mismatch, a good crystalline quality was obtained, and processed devices operated continuous wave up to 50degC, with threshold current densities in the range of 1.5 to 2.2 kA/cm². An optical output power of 3.7 mW was obtained at 20degC.